Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*
Identifieur interne : 000388 ( Main/Exploration ); précédent : 000387; suivant : 000389Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*
Auteurs : RBID : ISTEX:339_1991_Article_BF00323866.pdfEnglish descriptors
Abstract
A defect specific analysis technique is introduced that combines the high concentration sensitivity of deep level transient spectroscopy (DLTS) with the radioactive transmutation of probe atoms; this technique results in the chemical identification of particular atoms which participate in the observed defect centres. The method is demonstrated for n- and p-type silicon samples, which are implanted with radioactive 111In* ions. The activity of the indium ions decreases with half-life T1/2 of 2.83 d by a decay into stable cadmium ions. A series of Cd-related levels whose concentrations increase exponentially with the decay time of 111In* are identified in the DLTS spectra. Cd-diffused silicon samples are investigated for comparison; these samples reveal similar DLTS spectra. The analysis method described can be extended to all semiconductors and to a variety of radioactive probe atoms.
DOI: 10.1007/BF00323866
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Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7-9, W-3400, Göttingen</wicri:regionArea><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Göttingen</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1991_Article_BF00323866.pdf</idno><date when="1991">1991</date><idno type="doi">10.1007/BF00323866</idno><idno type="wicri:Area/Main/Corpus">000903</idno><idno type="wicri:Area/Main/Curation">000903</idno><idno type="wicri:Area/Main/Exploration">000388</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>23</term><term>71.55.-i</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">A defect specific analysis technique is introduced that combines the high concentration sensitivity of deep level transient spectroscopy (DLTS) with the radioactive transmutation of probe atoms; this technique results in the chemical identification of particular atoms which participate in the observed defect centres. The method is demonstrated for n- and p-type silicon samples, which are implanted with radioactive 111In* ions. The activity of the indium ions decreases with half-life T1/2 of 2.83 d by a decay into stable cadmium ions. A series of Cd-related levels whose concentrations increase exponentially with the decay time of 111In* are identified in the DLTS spectra. Cd-diffused silicon samples are investigated for comparison; these samples reveal similar DLTS spectra. The analysis method described can be extended to all semiconductors and to a variety of radioactive probe atoms.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="9d11c04ee72b890aa44a4d529b6e1bc6d6ee0a82"><titleInfo lang="eng"><title>Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*</title></titleInfo><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Lang</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudstrasse 7, W-8520, Erlangen, Fed. Rep. Germany</affiliation></name><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Pensl</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudstrasse 7, W-8520, Erlangen, Fed. Rep. Germany</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Gebhard</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalisches Institut, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, W-8520, Erlangen, Fed. Rep. Germany</affiliation></name><name type="personal"><namePart type="given">N.</namePart><namePart type="family">Achtziger</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalisches Institut, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, W-8520, Erlangen, Fed. Rep. Germany</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Uhrmacher</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>II. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7-9, W-3400, Göttingen, Fed. Rep. Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1991-02-21</dateCreated><dateCaptured encoding="w3cdtf">1991-03-12</dateCaptured><dateValid encoding="w3cdtf">2004-08-27</dateValid><copyrightDate encoding="w3cdtf">1991</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">A defect specific analysis technique is introduced that combines the high concentration sensitivity of deep level transient spectroscopy (DLTS) with the radioactive transmutation of probe atoms; this technique results in the chemical identification of particular atoms which participate in the observed defect centres. The method is demonstrated for n- and p-type silicon samples, which are implanted with radioactive 111In* ions. The activity of the indium ions decreases with half-life T1/2 of 2.83 d by a decay into stable cadmium ions. A series of Cd-related levels whose concentrations increase exponentially with the decay time of 111In* are identified in the DLTS spectra. Cd-diffused silicon samples are investigated for comparison; these samples reveal similar DLTS spectra. The analysis method described can be extended to all semiconductors and to a variety of radioactive probe atoms.</abstract><subject lang="eng"><genre>PACS</genre><topic>71.55.-i</topic><topic>23</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1991</partNumber><partNumber>Volume: 53</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1991-08-01</dateIssued><copyrightDate encoding="w3cdtf">1991</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Condensed Matter and Material Sciences</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Semiconductors</topic><topic>Micro- and Nanosystems</topic><topic>Materials Processing, Characterization, and Design</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 16</identifier><recordInfo><recordOrigin>Springer-Verlag, 1991</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00323866</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF00323866</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>95</start><end>101</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1991</recordOrigin><recordIdentifier>339_1991_Article_BF00323866.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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